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MMBT6517LT3G

MMBT6517LT3G

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AMI Semiconductor / ON Semiconductor

Part Number:: MMBT6517LT3G

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS NPN 350V 0.1A SOT-23

Datasheets:: MMBT6517LT3G.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5311 pcs stock

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MMBT6517LT3G

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Specifications of MMBT6517LT3G

AMI Semiconductor / ON Semiconductor

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Part Number	MMBT6517LT3G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 350V 0.1A SOT-23	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5311 pcs stock	Data sheet	MMBT6517LT3G.pdf
Voltage - Collector Emitter Breakdown (Max)	350V	Vce Saturation (Max) @ Ib, Ic	1V @ 5mA, 50mA
Transistor Type	NPN	Supplier Device Package	SOT-23-3 (TO-236)
Series	-	Power - Max	225mW
Packaging	Cut Tape (CT)	Package / Case	TO-236-3, SC-59, SOT-23-3
Other Names	MMBT6517LT3GOSCT	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	200MHz
Detailed Description	Bipolar (BJT) Transistor NPN 350V 100mA 200MHz 225mW Surface Mount SOT-23-3 (TO-236)	DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 50mA, 10V
Current - Collector Cutoff (Max)	50nA (ICBO)	Current - Collector (Ic) (Max)	100mA

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Part Number	MMBT6517LT3G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 350V 0.1A SOT-23	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5311 pcs stock	Data sheet	MMBT6517LT3G.pdf
Voltage - Collector Emitter Breakdown (Max)	350V	Vce Saturation (Max) @ Ib, Ic	1V @ 5mA, 50mA
Transistor Type	NPN	Supplier Device Package	SOT-23-3 (TO-236)
Series	-	Power - Max	225mW
Packaging	Cut Tape (CT)	Package / Case	TO-236-3, SC-59, SOT-23-3
Other Names	MMBT6517LT3GOSCT	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	200MHz
Detailed Description	Bipolar (BJT) Transistor NPN 350V 100mA 200MHz 225mW Surface Mount SOT-23-3 (TO-236)	DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 50mA, 10V
Current - Collector Cutoff (Max)	50nA (ICBO)	Current - Collector (Ic) (Max)	100mA