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MUN2215T1G

MUN2215T1G

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AMI Semiconductor / ON Semiconductor

Part Number:: MUN2215T1G

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS PREBIAS NPN 338MW SC59

Datasheets:: MUN2215T1G.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 1489736 pcs stock

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Specifications of MUN2215T1G

AMI Semiconductor / ON Semiconductor

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Part Number	MUN2215T1G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PREBIAS NPN 338MW SC59	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1489736 pcs stock	Data sheet	MUN2215T1G.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	SC-59
Series	-	Resistor - Base (R1)	10 kOhms
Power - Max	338mW	Packaging	Original-Reel®
Package / Case	TO-236-3, SC-59, SOT-23-3	Other Names	MUN2215T1GOSDKR
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	2 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59	DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 5mA, 10V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA

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Part Number	MUN2215T1G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PREBIAS NPN 338MW SC59	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1489736 pcs stock	Data sheet	MUN2215T1G.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	SC-59
Series	-	Resistor - Base (R1)	10 kOhms
Power - Max	338mW	Packaging	Original-Reel®
Package / Case	TO-236-3, SC-59, SOT-23-3	Other Names	MUN2215T1GOSDKR
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	2 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59	DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 5mA, 10V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA