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PDTB113EUF

PDTB113EUF

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Nexperia

Part Number:: PDTB113EUF

Manufacturer/Brand:: Nexperia

Product Description:: TRANS PREBIAS PNP 0.425W

Datasheets:: PDTB113EUF.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 1226624 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 1226624 pcs Reference Price(In US Dollars)

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PDTB113EUF

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Specifications of PDTB113EUF

Nexperia

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Part Number	PDTB113EUF	Manufacturer	Nexperia
Description	TRANS PREBIAS PNP 0.425W	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1226624 pcs stock	Data sheet	PDTB113EUF.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	100mV @ 2.5mA, 50mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	SOT-323-3
Series	-	Resistor - Emitter Base (R2)	1 kOhms
Resistor - Base (R1)	1 kOhms	Power - Max	300mW
Packaging	Tape & Reel (TR)	Package / Case	SC-70, SOT-323
Other Names	934068333135	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	140MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 140MHz 300mW Surface Mount SOT-323-3
DC Current Gain (hFE) (Min) @ Ic, Vce	33 @ 50mA, 5V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	500mA

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Part Number	PDTB113EUF	Manufacturer	Nexperia
Description	TRANS PREBIAS PNP 0.425W	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1226624 pcs stock	Data sheet	PDTB113EUF.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	100mV @ 2.5mA, 50mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	SOT-323-3
Series	-	Resistor - Emitter Base (R2)	1 kOhms
Resistor - Base (R1)	1 kOhms	Power - Max	300mW
Packaging	Tape & Reel (TR)	Package / Case	SC-70, SOT-323
Other Names	934068333135	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	140MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 140MHz 300mW Surface Mount SOT-323-3
DC Current Gain (hFE) (Min) @ Ic, Vce	33 @ 50mA, 5V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	500mA