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PDTD113ES,126

PDTD113ES,126

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Part Number:: PDTD113ES,126

Manufacturer/Brand:: N/A

Product Description:: TRANS PREBIAS NPN 500MW TO92-3

Datasheets:

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5635 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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PDTD113ES,126

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Specifications of PDTD113ES,126

PDTD113ES,126

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Part Number	PDTD113ES,126	Manufacturer	NXP Semiconductors / Freescale
Description	TRANS PREBIAS NPN 500MW TO92-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5635 pcs stock	Data sheet
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	TO-92-3
Series	-	Resistor - Emitter Base (R2)	1 kOhms
Resistor - Base (R1)	1 kOhms	Power - Max	500mW
Packaging	Tape & Box (TB)	Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Other Names	934059141126 PDTD113ES AMO PDTD113ES AMO-ND	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 500mW Through Hole TO-92-3	DC Current Gain (hFE) (Min) @ Ic, Vce	33 @ 50mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	500mA
Base Part Number	PDTD113

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Part Number	PDTD113ES,126	Manufacturer	NXP Semiconductors / Freescale
Description	TRANS PREBIAS NPN 500MW TO92-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5635 pcs stock	Data sheet
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	TO-92-3
Series	-	Resistor - Emitter Base (R2)	1 kOhms
Resistor - Base (R1)	1 kOhms	Power - Max	500mW
Packaging	Tape & Box (TB)	Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Other Names	934059141126 PDTD113ES AMO PDTD113ES AMO-ND	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 500mW Through Hole TO-92-3	DC Current Gain (hFE) (Min) @ Ic, Vce	33 @ 50mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	500mA
Base Part Number	PDTD113