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PDTD113EUF

PDTD113EUF

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Nexperia

Part Number:: PDTD113EUF

Manufacturer/Brand:: Nexperia

Product Description:: TRANS PREBIAS NPN 0.425W

Datasheets:: PDTD113EUF.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 1110271 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 1110271 pcs Reference Price(In US Dollars)

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PDTD113EUF

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Specifications of PDTD113EUF

Nexperia

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Part Number	PDTD113EUF	Manufacturer	Nexperia
Description	TRANS PREBIAS NPN 0.425W	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1110271 pcs stock	Data sheet	PDTD113EUF.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	100mV @ 2.5mA, 50mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	SOT-323-3
Series	-	Resistor - Emitter Base (R2)	1 kOhms
Resistor - Base (R1)	1 kOhms	Power - Max	300mW
Packaging	Tape & Reel (TR)	Package / Case	SC-70, SOT-323
Other Names	934068341135	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	225MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 225MHz 300mW Surface Mount SOT-323-3
DC Current Gain (hFE) (Min) @ Ic, Vce	33 @ 50mA, 5V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	500mA

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Part Number	PDTD113EUF	Manufacturer	Nexperia
Description	TRANS PREBIAS NPN 0.425W	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1110271 pcs stock	Data sheet	PDTD113EUF.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	100mV @ 2.5mA, 50mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	SOT-323-3
Series	-	Resistor - Emitter Base (R2)	1 kOhms
Resistor - Base (R1)	1 kOhms	Power - Max	300mW
Packaging	Tape & Reel (TR)	Package / Case	SC-70, SOT-323
Other Names	934068341135	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	225MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 225MHz 300mW Surface Mount SOT-323-3
DC Current Gain (hFE) (Min) @ Ic, Vce	33 @ 50mA, 5V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	500mA