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RN1106MFV(TL3,T)

RN1106MFV(TL3,T)

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Toshiba Semiconductor and Storage

Part Number:: RN1106MFV(TL3,T)

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS PREBIAS NPN 0.15W VESM

Datasheets:: RN1106MFV(TL3,T).pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5806 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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RN1106MFV(TL3,T)

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Specifications of RN1106MFV(TL3,T)

Toshiba Semiconductor and Storage

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Part Number	RN1106MFV(TL3,T)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 0.15W VESM	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5806 pcs stock	Data sheet	RN1106MFV(TL3,T).pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	VESM
Series	-	Resistor - Emitter Base (R2)	47 kOhms
Resistor - Base (R1)	4.7 kOhms	Power - Max	150mW
Packaging	Cut Tape (CT)	Package / Case	SOT-723
Other Names	RN1106MFV(TL3T)CT	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA

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Part Number	RN1106MFV(TL3,T)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 0.15W VESM	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5806 pcs stock	Data sheet	RN1106MFV(TL3,T).pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	VESM
Series	-	Resistor - Emitter Base (R2)	47 kOhms
Resistor - Base (R1)	4.7 kOhms	Power - Max	150mW
Packaging	Cut Tape (CT)	Package / Case	SOT-723
Other Names	RN1106MFV(TL3T)CT	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA