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RN1107ACT(TPL3)

RN1107ACT(TPL3)

RN1107ACT(TPL3)
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See specifications for product details.
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
RN1107ACT(TPL3)
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
TRANS PREBIAS NPN 0.1W CST3
Datasheets:
RN1107ACT(TPL3).pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
1123626 pcs stock
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Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 1123626 pcs Reference Price(In US Dollars)

  • 1 pcs
    $0.154
  • 10 pcs
    $0.111
  • 25 pcs
    $0.086
  • 100 pcs
    $0.065
  • 250 pcs
    $0.046
  • 500 pcs
    $0.037
  • 1000 pcs
    $0.028
  • 2500 pcs
    $0.025
  • 5000 pcs
    $0.022
Target Price(USD):
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RN1107ACT(TPL3)
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RN1107ACT(TPL3)

Specifications of RN1107ACT(TPL3)

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
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Part Number RN1107ACT(TPL3) Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.1W CST3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1123626 pcs stock Data sheet RN1107ACT(TPL3).pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA
Transistor Type NPN - Pre-Biased Supplier Device Package CST3
Series - Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 10 kOhms Power - Max 100mW
Packaging Cut Tape (CT) Package / Case SC-101, SOT-883
Other Names RN1107ACT(TPL3)CT Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 100mW Surface Mount CST3 DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 80mA
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