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RN1110CT(TPL3)

RN1110CT(TPL3)

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Toshiba Semiconductor and Storage

Part Number:: RN1110CT(TPL3)

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS PREBIAS NPN 0.05W CST3

Datasheets:: RN1110CT(TPL3).pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 4767 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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RN1110CT(TPL3)

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Specifications of RN1110CT(TPL3)

Toshiba Semiconductor and Storage

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Part Number	RN1110CT(TPL3)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 0.05W CST3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4767 pcs stock	Data sheet	RN1110CT(TPL3).pdf
Voltage - Collector Emitter Breakdown (Max)	20V	Vce Saturation (Max) @ Ib, Ic	150mV @ 250µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	CST3
Series	-	Resistor - Base (R1)	4.7 kOhms
Power - Max	50mW	Packaging	Tape & Reel (TR)
Package / Case	SC-101, SOT-883	Other Names	RN1110CT(TPL3)TR
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20V 50mA 50mW Surface Mount CST3
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 1mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	50mA

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Part Number	RN1110CT(TPL3)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 0.05W CST3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4767 pcs stock	Data sheet	RN1110CT(TPL3).pdf
Voltage - Collector Emitter Breakdown (Max)	20V	Vce Saturation (Max) @ Ib, Ic	150mV @ 250µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	CST3
Series	-	Resistor - Base (R1)	4.7 kOhms
Power - Max	50mW	Packaging	Tape & Reel (TR)
Package / Case	SC-101, SOT-883	Other Names	RN1110CT(TPL3)TR
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20V 50mA 50mW Surface Mount CST3
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 1mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	50mA