Home; Products; Discrete Semiconductor Products; Transistors - Bipolar (BJT) - Single, Pre-Biased
RN1110MFV,L3F

RN1110MFV,L3F

Product Overview
Specifications

Image may be representation.
See specifications for product details.

Toshiba Semiconductor and Storage

Part Number:: RN1110MFV,L3F

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS PREBIAS NPN 0.15W VESM

Datasheets:: RN1110MFV,L3F.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 2460084 pcs stock

Ship From:

Shipment Way:: DHL/Fedex/TNT/UPS/EMS

REQUEST QUOTE

Please complete all required fields with your contact information.Click "SUBMIT RFQ"
we will contact you shortly by email. Or Email us:info@pss-electrocomponents.com

In Stock 2460084 pcs Reference Price(In US Dollars)

8000 pcs
$0.01

Target Price(USD):

Qty:

Please give us your target price if quantities greater than those displayed.

Total: $0.000

RN1110MFV,L3F

Company Name

Contact Name

E-mail

Message

Specifications of RN1110MFV,L3F

Toshiba Semiconductor and Storage

(Click the blank to close automatically)

Part Number	RN1110MFV,L3F	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 0.15W VESM	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	2460084 pcs stock	Data sheet	RN1110MFV,L3F.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	VESM
Series	-	Resistor - Base (R1)	4.7 kOhms
Power - Max	150mW	Packaging	Tape & Reel (TR)
Package / Case	SOT-723	Other Names	RN1110MFV(TL3,T) RN1110MFV(TL3T)TR RN1110MFV(TL3T)TR-ND RN1110MFV,L3F(B RN1110MFV,L3F(T RN1110MFVL3F RN1110MFVL3F-ND RN1110MFVL3FTR RN1110MFVTL3T
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	16 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM	DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	100mA

~~Shut down~~

After-sales
Shipment
Datasheets

AFTER-SALES GUARANTEE

1. Each product from Pss-Electrocomponents.com has been given a warranty period of 365 days. During this period, we could provide free technical maintenance if there are any problems about our products.

2. If you find quality problems about our products after receiving them, you could test them and apply for unconditional refund if it can be proved.

3. If the products are defective or they don't working, you can return to us within 1 YEAR, all transportation and customs charges of the goods are borne by us.

★ FREE SHIPPING VIA DHL/FEDEX/UPS IF ORDER AMOUNT OVER 1,000 USD.
(ONLY FOR Integrated Circuits, Circuit Protection, RF/IF and RFID, Optoelectronics, Sensors, Transducers, Transformers, Isolators, Switches, Relays)

FEDEX	www.FedEx.com	From $35.00 basic shipping fee depend on zone and country.
DHL	www.DHL.com	From $35.00 basic shipping fee depend on zone and country.
UPS	www.UPS.com	From $35.00 basic shipping fee depend on zone and country.
TNT	www.TNT.com	From $35.00 basic shipping fee depend on zone and country.

★ Delivery time will need 2-4 Days to most of country all over the world by DHL/UPS/FEDEX/TNT.

Please feel free to contact us if you have any questions about the shipment. E-mail us info@pss-electrocomponents.com

Part Number	RN1110MFV,L3F	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 0.15W VESM	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	2460084 pcs stock	Data sheet	RN1110MFV,L3F.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	VESM
Series	-	Resistor - Base (R1)	4.7 kOhms
Power - Max	150mW	Packaging	Tape & Reel (TR)
Package / Case	SOT-723	Other Names	RN1110MFV(TL3,T) RN1110MFV(TL3T)TR RN1110MFV(TL3T)TR-ND RN1110MFV,L3F(B RN1110MFV,L3F(T RN1110MFVL3F RN1110MFVL3F-ND RN1110MFVL3FTR RN1110MFVTL3T
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	16 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM	DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	100mA