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RN1116MFV,L3F

RN1116MFV,L3F

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Toshiba Semiconductor and Storage

Part Number:: RN1116MFV,L3F

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: X34 PB-F VESM TRANSISTOR PD 150M

Datasheets:: RN1116MFV,L3F.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 2322904 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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RN1116MFV,L3F

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Specifications of RN1116MFV,L3F

Toshiba Semiconductor and Storage

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Part Number	RN1116MFV,L3F	Manufacturer	Toshiba Semiconductor and Storage
Description	X34 PB-F VESM TRANSISTOR PD 150M	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	2322904 pcs stock	Data sheet	RN1116MFV,L3F.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	VESM
Series	-	Resistor - Emitter Base (R2)	10 kOhms
Resistor - Base (R1)	4.7 kOhms	Power - Max	150mW
Package / Case	SOT-723	Other Names	RN1116MFVL3F
Mounting Type	Surface Mount	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	250MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 5V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA

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Part Number	RN1116MFV,L3F	Manufacturer	Toshiba Semiconductor and Storage
Description	X34 PB-F VESM TRANSISTOR PD 150M	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	2322904 pcs stock	Data sheet	RN1116MFV,L3F.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	VESM
Series	-	Resistor - Emitter Base (R2)	10 kOhms
Resistor - Base (R1)	4.7 kOhms	Power - Max	150mW
Package / Case	SOT-723	Other Names	RN1116MFVL3F
Mounting Type	Surface Mount	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	250MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 5V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA