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RN1131MFV(TL3,T)

RN1131MFV(TL3,T)

RN1131MFV(TL3,T)
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See specifications for product details.
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
RN1131MFV(TL3,T)
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
TRANS PREBIAS NPN 0.15W VESM
Datasheets:
RN1131MFV(TL3,T).pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
1594422 pcs stock
Ship From:
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 1594422 pcs Reference Price(In US Dollars)

  • 1 pcs
    $0.083
  • 10 pcs
    $0.075
  • 25 pcs
    $0.068
  • 100 pcs
    $0.049
  • 250 pcs
    $0.029
  • 500 pcs
    $0.024
  • 1000 pcs
    $0.016
  • 2500 pcs
    $0.014
Target Price(USD):
Qty:
Please give us your target price if quantities greater than those displayed.
Total: $0.000
RN1131MFV(TL3,T)
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RN1131MFV(TL3,T)

Specifications of RN1131MFV(TL3,T)

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
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Part Number RN1131MFV(TL3,T) Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.15W VESM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1594422 pcs stock Data sheet RN1131MFV(TL3,T).pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Transistor Type NPN - Pre-Biased Supplier Device Package VESM
Series - Resistor - Base (R1) 100 kOhms
Power - Max 150mW Packaging Cut Tape (CT)
Package / Case SOT-723 Other Names RN1131MFV(TL3T)CT
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA  
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