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RN1313(TE85L,F)

RN1313(TE85L,F)

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Toshiba Semiconductor and Storage

Part Number:: RN1313(TE85L,F)

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS PREBIAS NPN 0.15W USM

Datasheets:: RN1313(TE85L,F).pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 1080174 pcs stock

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RN1313(TE85L,F)

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Specifications of RN1313(TE85L,F)

Toshiba Semiconductor and Storage

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Part Number	RN1313(TE85L,F)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 0.15W USM	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1080174 pcs stock	Data sheet	RN1313(TE85L,F).pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	USM
Series	-	Resistor - Base (R1)	47 kOhms
Power - Max	150mW	Packaging	Cut Tape (CT)
Package / Case	SC-70, SOT-323	Other Names	RN1313(TE85LF)CT
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	250MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount USM	DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	100mA

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Part Number	RN1313(TE85L,F)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 0.15W USM	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1080174 pcs stock	Data sheet	RN1313(TE85L,F).pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	USM
Series	-	Resistor - Base (R1)	47 kOhms
Power - Max	150mW	Packaging	Cut Tape (CT)
Package / Case	SC-70, SOT-323	Other Names	RN1313(TE85LF)CT
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	250MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount USM	DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	100mA