Home
Products
Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Single, Pre-Biased
RN1316,LF

RN1316,LF

RN1316,LF
Image may be representation.
See specifications for product details.
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
RN1316,LF
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
TRANS PREBIAS NPN 0.1W USM
Datasheets:
RN1316,LF.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
1502215 pcs stock
Ship From:
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

REQUEST QUOTE

Please complete all required fields with your contact information.Click "SUBMIT RFQ"
we will contact you shortly by email. Or Email us:info@pss-electrocomponents.com

In Stock 1502215 pcs Reference Price(In US Dollars)

  • 1 pcs
    $0.085
  • 10 pcs
    $0.077
  • 25 pcs
    $0.07
  • 100 pcs
    $0.051
  • 250 pcs
    $0.03
  • 500 pcs
    $0.025
  • 1000 pcs
    $0.017
Target Price(USD):
Qty:
Please give us your target price if quantities greater than those displayed.
Total: $0.000
RN1316,LF
Company Name
Contact Name
E-mail
Message
RN1316,LF

Specifications of RN1316,LF

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
(Click the blank to close automatically)
Part Number RN1316,LF Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.1W USM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1502215 pcs stock Data sheet RN1316,LF.pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type NPN - Pre-Biased Supplier Device Package USM
Series - Resistor - Emitter Base (R2) 10 kOhms
Resistor - Base (R1) 4.7 kOhms Power - Max 100mW
Packaging Original-Reel® Package / Case SC-70, SOT-323
Other Names RN1316(TE85LF)DKR
RN1316(TE85LF)DKR-ND
RN1316LFDKR
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 16 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount USM DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA
Shut down

Related Products