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RN1416,LF

RN1416,LF

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Toshiba Semiconductor and Storage

Part Number:: RN1416,LF

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS PREBIAS NPN 0.2W S-MINI

Datasheets:: RN1416,LF.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 1502209 pcs stock

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RN1416,LF

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Specifications of RN1416,LF

Toshiba Semiconductor and Storage

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Part Number	RN1416,LF	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 0.2W S-MINI	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1502209 pcs stock	Data sheet	RN1416,LF.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	S-Mini
Series	-	Resistor - Emitter Base (R2)	10 kOhms
Resistor - Base (R1)	4.7 kOhms	Power - Max	200mW
Packaging	Cut Tape (CT)	Package / Case	TO-236-3, SC-59, SOT-23-3
Other Names	RN1416LFCT	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	12 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	250MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount S-Mini	DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA

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Part Number	RN1416,LF	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 0.2W S-MINI	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1502209 pcs stock	Data sheet	RN1416,LF.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	S-Mini
Series	-	Resistor - Emitter Base (R2)	10 kOhms
Resistor - Base (R1)	4.7 kOhms	Power - Max	200mW
Packaging	Cut Tape (CT)	Package / Case	TO-236-3, SC-59, SOT-23-3
Other Names	RN1416LFCT	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	12 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	250MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount S-Mini	DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA