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RN1427TE85LF

RN1427TE85LF

RN1427TE85LF
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See specifications for product details.
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
RN1427TE85LF
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
TRANS PREBIAS NPN 200MW SMINI
Datasheets:
RN1427TE85LF.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
513328 pcs stock
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Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 513328 pcs Reference Price(In US Dollars)

  • 3000 pcs
    $0.041
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RN1427TE85LF
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RN1427TE85LF

Specifications of RN1427TE85LF

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
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Part Number RN1427TE85LF Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 200MW SMINI Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 513328 pcs stock Data sheet RN1427TE85LF.pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 50mA
Transistor Type NPN - Pre-Biased Supplier Device Package S-Mini
Series - Resistor - Emitter Base (R2) 10 kOhms
Resistor - Base (R1) 2.2 kOhms Power - Max 200mW
Packaging Tape & Reel (TR) Package / Case TO-236-3, SC-59, SOT-23-3
Other Names RN1427(TE85L,F) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 11 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 300MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 800mA 300MHz 200mW Surface Mount S-Mini DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 100mA, 1V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 800mA
Base Part Number RN142*  
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