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RN1442ATE85LF

RN1442ATE85LF

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Toshiba Semiconductor and Storage

Part Number:: RN1442ATE85LF

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS PREBIAS NPN 0.2W S-MINI

Datasheets:: RN1442ATE85LF.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 503071 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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RN1442ATE85LF

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Specifications of RN1442ATE85LF

Toshiba Semiconductor and Storage

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Part Number	RN1442ATE85LF	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 0.2W S-MINI	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	503071 pcs stock	Data sheet	RN1442ATE85LF.pdf
Voltage - Collector Emitter Breakdown (Max)	20V	Vce Saturation (Max) @ Ib, Ic	100mV @ 3mA, 30mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	S-Mini
Series	-	Resistor - Base (R1)	10 kOhms
Power - Max	200mW	Packaging	Original-Reel®
Package / Case	TO-236-3, SC-59, SOT-23-3	Other Names	RN1442ATE85LFDKR
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	30MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20V 300mA 30MHz 200mW Surface Mount S-Mini	DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 4mA, 2V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	300mA

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Part Number	RN1442ATE85LF	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 0.2W S-MINI	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	503071 pcs stock	Data sheet	RN1442ATE85LF.pdf
Voltage - Collector Emitter Breakdown (Max)	20V	Vce Saturation (Max) @ Ib, Ic	100mV @ 3mA, 30mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	S-Mini
Series	-	Resistor - Base (R1)	10 kOhms
Power - Max	200mW	Packaging	Original-Reel®
Package / Case	TO-236-3, SC-59, SOT-23-3	Other Names	RN1442ATE85LFDKR
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	30MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20V 300mA 30MHz 200mW Surface Mount S-Mini	DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 4mA, 2V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	300mA