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Part Number | RN2105MFV,L3F | Manufacturer | Toshiba Semiconductor and Storage |
---|---|---|---|
Description | X34 PB-F VESM TRANSISTOR PD 150M | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 4213 pcs stock | Data sheet | RN2105MFV,L3F.pdf |
Voltage - Collector Emitter Breakdown (Max) | 50V | Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
Transistor Type | PNP - Pre-Biased | Supplier Device Package | VESM |
Series | - | Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 2.2 kOhms | Power - Max | 150mW |
Package / Case | SOT-723 | Other Names | RN2105MFVL3F |
Mounting Type | Surface Mount | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM | DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Current - Collector Cutoff (Max) | 100nA (ICBO) | Current - Collector (Ic) (Max) | 100mA |
FEDEX | www.FedEx.com | From $35.00 basic shipping fee depend on zone and country. |
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DHL | www.DHL.com | From $35.00 basic shipping fee depend on zone and country. |
UPS | www.UPS.com | From $35.00 basic shipping fee depend on zone and country. |
TNT | www.TNT.com | From $35.00 basic shipping fee depend on zone and country. |
Part Number | RN2105MFV,L3F | Manufacturer | Toshiba Semiconductor and Storage |
---|---|---|---|
Description | X34 PB-F VESM TRANSISTOR PD 150M | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 4213 pcs stock | Data sheet | RN2105MFV,L3F.pdf |
Voltage - Collector Emitter Breakdown (Max) | 50V | Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
Transistor Type | PNP - Pre-Biased | Supplier Device Package | VESM |
Series | - | Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 2.2 kOhms | Power - Max | 150mW |
Package / Case | SOT-723 | Other Names | RN2105MFVL3F |
Mounting Type | Surface Mount | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM | DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Current - Collector Cutoff (Max) | 100nA (ICBO) | Current - Collector (Ic) (Max) | 100mA |