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RN2109CT(TPL3)

RN2109CT(TPL3)

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Toshiba Semiconductor and Storage

Part Number:: RN2109CT(TPL3)

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS PREBIAS PNP 0.05W CST3

Datasheets:: RN2109CT(TPL3).pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5643 pcs stock

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RN2109CT(TPL3)

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Specifications of RN2109CT(TPL3)

Toshiba Semiconductor and Storage

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Part Number	RN2109CT(TPL3)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS PNP 0.05W CST3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5643 pcs stock	Data sheet	RN2109CT(TPL3).pdf
Voltage - Collector Emitter Breakdown (Max)	20V	Vce Saturation (Max) @ Ib, Ic	150mV @ 250µA, 5mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	CST3
Series	-	Resistor - Emitter Base (R2)	22 kOhms
Resistor - Base (R1)	47 kOhms	Power - Max	50mW
Packaging	Original-Reel®	Package / Case	SC-101, SOT-883
Other Names	RN2109CT(TPL3)DKR	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 20V 50mA 50mW Surface Mount CST3	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	50mA

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Part Number	RN2109CT(TPL3)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS PNP 0.05W CST3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5643 pcs stock	Data sheet	RN2109CT(TPL3).pdf
Voltage - Collector Emitter Breakdown (Max)	20V	Vce Saturation (Max) @ Ib, Ic	150mV @ 250µA, 5mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	CST3
Series	-	Resistor - Emitter Base (R2)	22 kOhms
Resistor - Base (R1)	47 kOhms	Power - Max	50mW
Packaging	Original-Reel®	Package / Case	SC-101, SOT-883
Other Names	RN2109CT(TPL3)DKR	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 20V 50mA 50mW Surface Mount CST3	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	50mA