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RN2110,LF(CB

RN2110,LF(CB

RN2110,LF(CB
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See specifications for product details.
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
RN2110,LF(CB
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
TRANS PREBIAS PNP 50V 0.1W SSM
Datasheets:
RN2110,LF(CB.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
1831903 pcs stock
Ship From:
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 1831903 pcs Reference Price(In US Dollars)

  • 3000 pcs
    $0.013
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RN2110,LF(CB
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RN2110,LF(CB

Specifications of RN2110,LF(CB

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
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Part Number RN2110,LF(CB Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS PNP 50V 0.1W SSM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1831903 pcs stock Data sheet RN2110,LF(CB.pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type PNP - Pre-Biased Supplier Device Package SSM
Series - Resistor - Base (R1) 4.7 kOhms
Power - Max 100mW Packaging Tape & Reel (TR)
Package / Case SC-75, SOT-416 Other Names RN2110(T5L,F,T)
RN2110(T5LFT)TR
RN2110(T5LFT)TR-ND
RN2110,LF(CBTR
RN2110,LF(CT
RN2110LF(CBTR
RN2110LF(CTTR
RN2110LF(CTTR-ND
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 200MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount SSM
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA  
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