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RN2111ACT(TPL3)

RN2111ACT(TPL3)

RN2111ACT(TPL3)
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See specifications for product details.
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
RN2111ACT(TPL3)
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
TRANS PREBIAS PNP 0.1W CST3
Datasheets:
RN2111ACT(TPL3).pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
1242943 pcs stock
Ship From:
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 1242943 pcs Reference Price(In US Dollars)

  • 10000 pcs
    $0.019
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RN2111ACT(TPL3)
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RN2111ACT(TPL3)

Specifications of RN2111ACT(TPL3)

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
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Part Number RN2111ACT(TPL3) Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS PNP 0.1W CST3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1242943 pcs stock Data sheet RN2111ACT(TPL3).pdf
Voltage - Collector Emitter Breakdown (Max) 80mA Voltage - Breakdown CST3
Vce Saturation (Max) @ Ib, Ic 50V Series -
RoHS Status Tape & Reel (TR) Resistor - Emitter Base (R2) (Ohms) 10k
Resistor - Base (R1) (Ohms) - Power - Max 100mW
Polarization SC-101, SOT-883 Other Names RN2111ACT(TPL3)TR
Noise Figure (dB Typ @ f) - Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Part Number RN2111ACT(TPL3)
Frequency - Transition 120 @ 1mA, 5V Expanded Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 80mA 100mW Surface Mount CST3
Description TRANS PREBIAS PNP 0.1W CST3 DC Current Gain (hFE) (Min) @ Ic, Vce 100nA (ICBO)
Current - Collector Cutoff (Max) 150mV @ 250µA, 5mA Current - Collector (Ic) (Max) PNP - Pre-Biased
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