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RN2312(TE85L,F)

RN2312(TE85L,F)

RN2312(TE85L,F)
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Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
RN2312(TE85L,F)
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
TRANS PREBIAS PNP 0.1W USM
Datasheets:
RN2312(TE85L,F).pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
2230651 pcs stock
Ship From:
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 2230651 pcs Reference Price(In US Dollars)

  • 3000 pcs
    $0.018
  • 6000 pcs
    $0.016
  • 15000 pcs
    $0.013
  • 30000 pcs
    $0.012
  • 75000 pcs
    $0.012
  • 150000 pcs
    $0.01
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RN2312(TE85L,F)
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RN2312(TE85L,F)

Specifications of RN2312(TE85L,F)

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
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Part Number RN2312(TE85L,F) Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS PNP 0.1W USM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 2230651 pcs stock Data sheet RN2312(TE85L,F).pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type PNP - Pre-Biased Supplier Device Package USM
Series - Resistor - Base (R1) 22 kOhms
Power - Max 100mW Packaging Tape & Reel (TR)
Package / Case SC-70, SOT-323 Other Names RN2312(TE85LF)
RN2312(TE85LF)-ND
RN2312(TE85LF)TR
RN2312TE85LF
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 200MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA Base Part Number RN231*
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