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RN2413TE85LF

RN2413TE85LF

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Toshiba Semiconductor and Storage

Part Number:: RN2413TE85LF

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS PREBIAS PNP 0.2W SMINI

Datasheets:: RN2413TE85LF.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 1938890 pcs stock

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RN2413TE85LF

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Specifications of RN2413TE85LF

Toshiba Semiconductor and Storage

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Part Number	RN2413TE85LF	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS PNP 0.2W SMINI	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1938890 pcs stock	Data sheet	RN2413TE85LF.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	S-Mini
Series	-	Resistor - Base (R1)	47 kOhms
Power - Max	200mW	Packaging	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23-3	Other Names	RN2413(TE85L,F) RN2413TE85LF-ND RN2413TE85LFTR
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	11 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	200MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	100mA

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Part Number	RN2413TE85LF	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS PNP 0.2W SMINI	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1938890 pcs stock	Data sheet	RN2413TE85LF.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	S-Mini
Series	-	Resistor - Base (R1)	47 kOhms
Power - Max	200mW	Packaging	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23-3	Other Names	RN2413(TE85L,F) RN2413TE85LF-ND RN2413TE85LFTR
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	11 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	200MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	100mA