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UML6NTR

UML6NTR

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LAPIS Semiconductor

Part Number:: UML6NTR

Manufacturer/Brand:: LAPIS Semiconductor

Product Description:: TRANS NPN 12V 0.5A UMT6

Datasheets:: 1.UML6NTR.pdf 2.UML6NTR.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 613478 pcs stock

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Specifications of UML6NTR

LAPIS Semiconductor

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Part Number	UML6NTR	Manufacturer	LAPIS Semiconductor
Description	TRANS NPN 12V 0.5A UMT6	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	613478 pcs stock	Data sheet	1.UML6NTR.pdf 2.UML6NTR.pdf
Voltage - Collector Emitter Breakdown (Max)	12V	Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 200mA
Transistor Type	NPN + Diode (Isolated)	Supplier Device Package	UMT5
Series	-	Power - Max	120mW
Packaging	Tape & Reel (TR)	Package / Case	5-TSSOP, SC-70-5, SOT-353
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	10 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	320MHz
Detailed Description	Bipolar (BJT) Transistor NPN + Diode (Isolated) 12V 500mA 320MHz 120mW Surface Mount UMT5	DC Current Gain (hFE) (Min) @ Ic, Vce	270 @ 10mA, 2V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	500mA
Base Part Number	*ML6

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Part Number	UML6NTR	Manufacturer	LAPIS Semiconductor
Description	TRANS NPN 12V 0.5A UMT6	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	613478 pcs stock	Data sheet	1.UML6NTR.pdf 2.UML6NTR.pdf
Voltage - Collector Emitter Breakdown (Max)	12V	Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 200mA
Transistor Type	NPN + Diode (Isolated)	Supplier Device Package	UMT5
Series	-	Power - Max	120mW
Packaging	Tape & Reel (TR)	Package / Case	5-TSSOP, SC-70-5, SOT-353
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	10 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	320MHz
Detailed Description	Bipolar (BJT) Transistor NPN + Diode (Isolated) 12V 500mA 320MHz 120mW Surface Mount UMT5	DC Current Gain (hFE) (Min) @ Ic, Vce	270 @ 10mA, 2V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	500mA
Base Part Number	*ML6