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UNR421200A

UNR421200A

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Panasonic

Part Number:: UNR421200A

Manufacturer/Brand:: Panasonic

Product Description:: TRANS PREBIAS NPN 300MW NS-B1

Datasheets:: UNR421200A.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 194320 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 194320 pcs Reference Price(In US Dollars)

1 pcs
$0.182
10 pcs
$0.143
25 pcs
$0.121

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UNR421200A

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Specifications of UNR421200A

Panasonic

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Part Number	UNR421200A	Manufacturer	Panasonic
Description	TRANS PREBIAS NPN 300MW NS-B1	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	194320 pcs stock	Data sheet	UNR421200A.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	NS-B1
Series	-	Resistor - Emitter Base (R2)	22 kOhms
Resistor - Base (R1)	22 kOhms	Power - Max	300mW
Packaging	Cut Tape (CT)	Package / Case	NS-B1
Other Names	UNR421200ACT	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	150MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 300mW Through Hole NS-B1
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 10V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA

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Part Number	UNR421200A	Manufacturer	Panasonic
Description	TRANS PREBIAS NPN 300MW NS-B1	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	194320 pcs stock	Data sheet	UNR421200A.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	NS-B1
Series	-	Resistor - Emitter Base (R2)	22 kOhms
Resistor - Base (R1)	22 kOhms	Power - Max	300mW
Packaging	Cut Tape (CT)	Package / Case	NS-B1
Other Names	UNR421200ACT	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	150MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 300mW Through Hole NS-B1
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 10V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA