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UNR511200L

UNR511200L

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Panasonic

Part Number:: UNR511200L

Manufacturer/Brand:: Panasonic

Product Description:: TRANS PREBIAS PNP 150MW SMINI3

Datasheets:: UNR511200L.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5009 pcs stock

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UNR511200L

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Specifications of UNR511200L

Panasonic

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Part Number	UNR511200L	Manufacturer	Panasonic
Description	TRANS PREBIAS PNP 150MW SMINI3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5009 pcs stock	Data sheet	UNR511200L.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	SMini3-G1
Series	-	Resistor - Emitter Base (R2)	22 kOhms
Resistor - Base (R1)	22 kOhms	Power - Max	150mW
Packaging	Tape & Reel (TR)	Package / Case	SC-70, SOT-323
Other Names	UN5112-(TX) UN5112-TX UN5112TR UN5112TR-ND UNR511200LTR	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	80MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 80MHz 150mW Surface Mount SMini3-G1
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 10V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA

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Part Number	UNR511200L	Manufacturer	Panasonic
Description	TRANS PREBIAS PNP 150MW SMINI3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5009 pcs stock	Data sheet	UNR511200L.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	SMini3-G1
Series	-	Resistor - Emitter Base (R2)	22 kOhms
Resistor - Base (R1)	22 kOhms	Power - Max	150mW
Packaging	Tape & Reel (TR)	Package / Case	SC-70, SOT-323
Other Names	UN5112-(TX) UN5112-TX UN5112TR UN5112TR-ND UNR511200LTR	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	80MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 80MHz 150mW Surface Mount SMini3-G1
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 10V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA