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UNR92ALG0L

UNR92ALG0L

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Panasonic

Part Number:: UNR92ALG0L

Manufacturer/Brand:: Panasonic

Product Description:: TRANS PREBIAS NPN 125MW SSMINI3

Datasheets:: UNR92ALG0L.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5877 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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UNR92ALG0L

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Specifications of UNR92ALG0L

Panasonic

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Part Number	UNR92ALG0L	Manufacturer	Panasonic
Description	TRANS PREBIAS NPN 125MW SSMINI3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5877 pcs stock	Data sheet	UNR92ALG0L.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	SSMini3-F3
Series	-	Resistor - Emitter Base (R2)	4.7 kOhms
Resistor - Base (R1)	4.7 kOhms	Power - Max	125mW
Packaging	Tape & Reel (TR)	Package / Case	SC-89, SOT-490
Other Names	UNR92ALG0LTR	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	150MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 150MHz 125mW Surface Mount SSMini3-F3
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5mA, 10V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	80mA

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Part Number	UNR92ALG0L	Manufacturer	Panasonic
Description	TRANS PREBIAS NPN 125MW SSMINI3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5877 pcs stock	Data sheet	UNR92ALG0L.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	SSMini3-F3
Series	-	Resistor - Emitter Base (R2)	4.7 kOhms
Resistor - Base (R1)	4.7 kOhms	Power - Max	125mW
Packaging	Tape & Reel (TR)	Package / Case	SC-89, SOT-490
Other Names	UNR92ALG0LTR	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	150MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 150MHz 125mW Surface Mount SSMini3-F3
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5mA, 10V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	80mA