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UNRF2A300A

UNRF2A300A

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Specifications

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Panasonic

Part Number:: UNRF2A300A

Manufacturer/Brand:: Panasonic

Product Description:: TRANS PREBIAS NPN 100MW ML3-N2

Datasheets:: UNRF2A300A.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 492987 pcs stock

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In Stock 492987 pcs Reference Price(In US Dollars)

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100 pcs
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2500 pcs
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UNRF2A300A

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Specifications of UNRF2A300A

Panasonic

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Part Number	UNRF2A300A	Manufacturer	Panasonic
Description	TRANS PREBIAS NPN 100MW ML3-N2	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	492987 pcs stock	Data sheet	UNRF2A300A.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	ML3-N2
Series	-	Resistor - Emitter Base (R2)	47 kOhms
Resistor - Base (R1)	47 kOhms	Power - Max	100mW
Packaging	Original-Reel®	Package / Case	SC-101, SOT-883
Other Names	UNRF2A300ADKR	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	150MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 150MHz 100mW Surface Mount ML3-N2
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 10V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	80mA

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Part Number	UNRF2A300A	Manufacturer	Panasonic
Description	TRANS PREBIAS NPN 100MW ML3-N2	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	492987 pcs stock	Data sheet	UNRF2A300A.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	ML3-N2
Series	-	Resistor - Emitter Base (R2)	47 kOhms
Resistor - Base (R1)	47 kOhms	Power - Max	100mW
Packaging	Original-Reel®	Package / Case	SC-101, SOT-883
Other Names	UNRF2A300ADKR	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	150MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 150MHz 100mW Surface Mount ML3-N2
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 10V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	80mA