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2N5551

2N5551

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Central Semiconductor

Part Number:: 2N5551

Manufacturer/Brand:: Central Semiconductor

Product Description:: TRANS NPN 160V 0.6A TO-92

Datasheets:: 2N5551.pdf

RoHs Status:: Contains lead / RoHS non-compliant

Stock Condition:: 173552 pcs stock

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In Stock 173552 pcs Reference Price(In US Dollars)

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250 pcs
$0.207
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2N5551

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Specifications of 2N5551

Central Semiconductor

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Part Number	2N5551	Manufacturer	Central Semiconductor
Description	TRANS NPN 160V 0.6A TO-92	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	173552 pcs stock	Data sheet	2N5551.pdf
Voltage - Collector Emitter Breakdown (Max)	160V	Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Transistor Type	NPN	Supplier Device Package	TO-92
Series	-	Power - Max	625mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Other Names	2N5551 TIN/LEAD 2N5551_D26Z 2N5551CS	Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	16 Weeks	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	300MHz	Detailed Description	Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V	Current - Collector Cutoff (Max)	50nA (ICBO)
Current - Collector (Ic) (Max)	600mA

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Part Number	2N5551	Manufacturer	Central Semiconductor
Description	TRANS NPN 160V 0.6A TO-92	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	173552 pcs stock	Data sheet	2N5551.pdf
Voltage - Collector Emitter Breakdown (Max)	160V	Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Transistor Type	NPN	Supplier Device Package	TO-92
Series	-	Power - Max	625mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Other Names	2N5551 TIN/LEAD 2N5551_D26Z 2N5551CS	Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	16 Weeks	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	300MHz	Detailed Description	Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V	Current - Collector Cutoff (Max)	50nA (ICBO)
Current - Collector (Ic) (Max)	600mA