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2SA1312GRTE85LF

2SA1312GRTE85LF

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Toshiba Semiconductor and Storage

Part Number:: 2SA1312GRTE85LF

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS PNP 120V 0.1A S-MINI

Datasheets:: 2SA1312GRTE85LF.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5944 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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2SA1312GRTE85LF

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Specifications of 2SA1312GRTE85LF

Toshiba Semiconductor and Storage

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Part Number	2SA1312GRTE85LF	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PNP 120V 0.1A S-MINI	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5944 pcs stock	Data sheet	2SA1312GRTE85LF.pdf
Voltage - Collector Emitter Breakdown (Max)	120V	Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA
Transistor Type	PNP	Supplier Device Package	S-Mini
Series	-	Power - Max	150mW
Packaging	Cut Tape (CT)	Package / Case	TO-236-3, SC-59, SOT-23-3
Other Names	2SA1312GRTE85LFCT	Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	100MHz
Detailed Description	Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 150mW Surface Mount S-Mini	DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	100mA

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Part Number	2SA1312GRTE85LF	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PNP 120V 0.1A S-MINI	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5944 pcs stock	Data sheet	2SA1312GRTE85LF.pdf
Voltage - Collector Emitter Breakdown (Max)	120V	Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA
Transistor Type	PNP	Supplier Device Package	S-Mini
Series	-	Power - Max	150mW
Packaging	Cut Tape (CT)	Package / Case	TO-236-3, SC-59, SOT-23-3
Other Names	2SA1312GRTE85LFCT	Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	100MHz
Detailed Description	Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 150mW Surface Mount S-Mini	DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	100mA