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2SD2695(T6CNO,A,F)

2SD2695(T6CNO,A,F)

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Toshiba Semiconductor and Storage

Part Number:: 2SD2695(T6CNO,A,F)

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS NPN 2A 60V TO226-3

Datasheets:: 2SD2695(T6CNO,A,F).pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5783 pcs stock

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2SD2695(T6CNO,A,F)

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Specifications of 2SD2695(T6CNO,A,F)

Toshiba Semiconductor and Storage

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Part Number	2SD2695(T6CNO,A,F)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 2A 60V TO226-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5783 pcs stock	Data sheet	2SD2695(T6CNO,A,F).pdf
Voltage - Collector Emitter Breakdown (Max)	60V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 1mA, 1A
Transistor Type	NPN	Supplier Device Package	TO-92MOD
Series	-	Power - Max	900mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 Long Body
Other Names	2SD2695(T6CNOAF) 2SD2695T6CNOAF	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	100MHz
Detailed Description	Bipolar (BJT) Transistor NPN 60V 2A 100MHz 900mW Through Hole TO-92MOD	DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 1A, 2V
Current - Collector Cutoff (Max)	10µA (ICBO)	Current - Collector (Ic) (Max)	2A

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Part Number	2SD2695(T6CNO,A,F)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 2A 60V TO226-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5783 pcs stock	Data sheet	2SD2695(T6CNO,A,F).pdf
Voltage - Collector Emitter Breakdown (Max)	60V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 1mA, 1A
Transistor Type	NPN	Supplier Device Package	TO-92MOD
Series	-	Power - Max	900mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 Long Body
Other Names	2SD2695(T6CNOAF) 2SD2695T6CNOAF	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	100MHz
Detailed Description	Bipolar (BJT) Transistor NPN 60V 2A 100MHz 900mW Through Hole TO-92MOD	DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 1A, 2V
Current - Collector Cutoff (Max)	10µA (ICBO)	Current - Collector (Ic) (Max)	2A