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MUN2212T1G

MUN2212T1G

MUN2212T1G
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See specifications for product details.
AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
Part Number:
MUN2212T1G
Manufacturer/Brand:
AMI Semiconductor / ON Semiconductor
Product Description:
TRANS PREBIAS NPN 338MW SC59
Datasheets:
MUN2212T1G.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
4239162 pcs stock
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Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 4239162 pcs Reference Price(In US Dollars)

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  • 6000 pcs
    $0.009
  • 15000 pcs
    $0.008
  • 30000 pcs
    $0.007
  • 75000 pcs
    $0.006
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MUN2212T1G
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MUN2212T1G

Specifications of MUN2212T1G

AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
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Part Number MUN2212T1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 338MW SC59 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4239162 pcs stock Data sheet MUN2212T1G.pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Transistor Type NPN - Pre-Biased Supplier Device Package SC-59
Series - Resistor - Emitter Base (R2) 22 kOhms
Resistor - Base (R1) 22 kOhms Power - Max 338mW
Packaging Tape & Reel (TR) Package / Case TO-236-3, SC-59, SOT-23-3
Other Names MUN2212T1GOS
MUN2212T1GOS-ND
MUN2212T1GOSTR
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 10 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA Base Part Number MUN2212
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