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RN1130MFV,L3F

RN1130MFV,L3F

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Toshiba Semiconductor and Storage

Part Number:: RN1130MFV,L3F

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS PREBIAS NPN 0.15W VESM

Datasheets:: RN1130MFV,L3F.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 1912644 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 1912644 pcs Reference Price(In US Dollars)

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RN1130MFV,L3F

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Specifications of RN1130MFV,L3F

Toshiba Semiconductor and Storage

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Part Number	RN1130MFV,L3F	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 0.15W VESM	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1912644 pcs stock	Data sheet	RN1130MFV,L3F.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	VESM
Series	-	Resistor - Emitter Base (R2)	100 kOhms
Resistor - Base (R1)	100 kOhms	Power - Max	150mW
Packaging	Tape & Reel (TR)	Package / Case	SOT-723
Other Names	RN1130MFV(TL3,T) RN1130MFV(TL3T)TR RN1130MFV(TL3T)TR-ND RN1130MFV,L3F(B RN1130MFV,L3F(T RN1130MFVL3F RN1130MFVL3F-ND RN1130MFVL3FTR RN1130MFVTL3T	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	16 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	250MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA

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Part Number	RN1130MFV,L3F	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 0.15W VESM	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1912644 pcs stock	Data sheet	RN1130MFV,L3F.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	VESM
Series	-	Resistor - Emitter Base (R2)	100 kOhms
Resistor - Base (R1)	100 kOhms	Power - Max	150mW
Packaging	Tape & Reel (TR)	Package / Case	SOT-723
Other Names	RN1130MFV(TL3,T) RN1130MFV(TL3T)TR RN1130MFV(TL3T)TR-ND RN1130MFV,L3F(B RN1130MFV,L3F(T RN1130MFVL3F RN1130MFVL3F-ND RN1130MFVL3FTR RN1130MFVTL3T	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	16 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	250MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA