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2SC2229-Y,F(J

2SC2229-Y,F(J

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Toshiba Semiconductor and Storage

Part Number:: 2SC2229-Y,F(J

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS NPN 50MA 150V TO226-3

Datasheets:: 2SC2229-Y,F(J.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 4501 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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2SC2229-Y,F(J

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Specifications of 2SC2229-Y,F(J

Toshiba Semiconductor and Storage

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Part Number	2SC2229-Y,F(J	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 50MA 150V TO226-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4501 pcs stock	Data sheet	2SC2229-Y,F(J.pdf
Voltage - Collector Emitter Breakdown (Max)	150V	Vce Saturation (Max) @ Ib, Ic	500mV @ 1mA, 10mA
Transistor Type	NPN	Supplier Device Package	TO-92MOD
Series	-	Power - Max	800mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 Long Body
Other Names	2SC2229-YF(J 2SC2229YFJ	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	120MHz
Detailed Description	Bipolar (BJT) Transistor NPN 150V 50mA 120MHz 800mW Through Hole TO-92MOD	DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 5V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	50mA

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Part Number	2SC2229-Y,F(J	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 50MA 150V TO226-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4501 pcs stock	Data sheet	2SC2229-Y,F(J.pdf
Voltage - Collector Emitter Breakdown (Max)	150V	Vce Saturation (Max) @ Ib, Ic	500mV @ 1mA, 10mA
Transistor Type	NPN	Supplier Device Package	TO-92MOD
Series	-	Power - Max	800mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 Long Body
Other Names	2SC2229-YF(J 2SC2229YFJ	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	120MHz
Detailed Description	Bipolar (BJT) Transistor NPN 150V 50mA 120MHz 800mW Through Hole TO-92MOD	DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 5V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	50mA