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DTD114ECT116

DTD114ECT116

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LAPIS Semiconductor

Part Number:: DTD114ECT116

Manufacturer/Brand:: LAPIS Semiconductor

Product Description:: NPN 500MA/50V DIGITAL TRANSISTOR

Datasheets:: 1.DTD114ECT116.pdf 2.DTD114ECT116.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 950062 pcs stock

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DTD114ECT116

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Specifications of DTD114ECT116

LAPIS Semiconductor

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Part Number	DTD114ECT116	Manufacturer	LAPIS Semiconductor
Description	NPN 500MA/50V DIGITAL TRANSISTOR	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	950062 pcs stock	Data sheet	1.DTD114ECT116.pdf 2.DTD114ECT116.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	SST3
Series	-	Resistor - Emitter Base (R2)	10 kOhms
Resistor - Base (R1)	10 kOhms	Power - Max	200mW
Packaging	Original-Reel®	Package / Case	TO-236-3, SC-59, SOT-23-3
Other Names	DTD114ECT116DKR	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	10 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	200MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SST3	DC Current Gain (hFE) (Min) @ Ic, Vce	56 @ 50mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	500mA

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Part Number	DTD114ECT116	Manufacturer	LAPIS Semiconductor
Description	NPN 500MA/50V DIGITAL TRANSISTOR	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	950062 pcs stock	Data sheet	1.DTD114ECT116.pdf 2.DTD114ECT116.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	SST3
Series	-	Resistor - Emitter Base (R2)	10 kOhms
Resistor - Base (R1)	10 kOhms	Power - Max	200mW
Packaging	Original-Reel®	Package / Case	TO-236-3, SC-59, SOT-23-3
Other Names	DTD114ECT116DKR	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	10 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	200MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SST3	DC Current Gain (hFE) (Min) @ Ic, Vce	56 @ 50mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	500mA