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RN2107MFV,L3F

RN2107MFV,L3F

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Toshiba Semiconductor and Storage

Part Number:: RN2107MFV,L3F

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS PREBIAS NPN

Datasheets:: RN2107MFV,L3F.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 4802 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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RN2107MFV,L3F

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Specifications of RN2107MFV,L3F

Toshiba Semiconductor and Storage

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Part Number	RN2107MFV,L3F	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4802 pcs stock	Data sheet	RN2107MFV,L3F.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	VESM
Series	-	Resistor - Emitter Base (R2)	47 kOhms
Resistor - Base (R1)	10 kOhms	Power - Max	150mW
Packaging	Bulk	Package / Case	SOT-723
Other Names	RN2107MFV,L3F(B RN2107MFV,L3F(T RN2107MFVL3F	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA

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Part Number	RN2107MFV,L3F	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4802 pcs stock	Data sheet	RN2107MFV,L3F.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	VESM
Series	-	Resistor - Emitter Base (R2)	47 kOhms
Resistor - Base (R1)	10 kOhms	Power - Max	150mW
Packaging	Bulk	Package / Case	SOT-723
Other Names	RN2107MFV,L3F(B RN2107MFV,L3F(T RN2107MFVL3F	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA