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RN2305(TE85L,F)

RN2305(TE85L,F)

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Toshiba Semiconductor and Storage

Part Number:: RN2305(TE85L,F)

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS PREBIAS PNP 0.1W USM

Datasheets:: RN2305(TE85L,F).pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 402889 pcs stock

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RN2305(TE85L,F)

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Specifications of RN2305(TE85L,F)

Toshiba Semiconductor and Storage

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Part Number	RN2305(TE85L,F)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS PNP 0.1W USM	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	402889 pcs stock	Data sheet	RN2305(TE85L,F).pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	USM
Series	-	Resistor - Emitter Base (R2)	47 kOhms
Resistor - Base (R1)	2.2 kOhms	Power - Max	100mW
Packaging	Cut Tape (CT)	Package / Case	SC-70, SOT-323
Other Names	RN2305(TE85LF)CT	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	200MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA

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Part Number	RN2305(TE85L,F)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS PNP 0.1W USM	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	402889 pcs stock	Data sheet	RN2305(TE85L,F).pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	USM
Series	-	Resistor - Emitter Base (R2)	47 kOhms
Resistor - Base (R1)	2.2 kOhms	Power - Max	100mW
Packaging	Cut Tape (CT)	Package / Case	SC-70, SOT-323
Other Names	RN2305(TE85LF)CT	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	200MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA